2001. 2. 24
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SEMICONDUCTOR
TECHNICAL DATA
KTA1517S
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 3
LOW NOISE AMPLIFIER APPLICATION.
FEATURES
High Voltage : V
CEO
=-120V.
Excellent h
FE
Linearity
: h
FE
(0.1mA)/h
FE
(2mA)=0.95(Typ.).
High h
FE
: h
FE
=200 700.
Low Noise : NF=1dB(Typ.), 10dB(Max.).
Complementary to KTC3911S.
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
L
L
P
P
P
7
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : h
FE
Classification GR(G):200 400 BL(L):350 700
h Rank
Type Name
Marking
Lot No.
AC
FE
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-120V, I
E
=0
-
-
-0.1
A
Emitter Cut-off Current
I
EBO
V
EB
=-5V, I
C
=0
-
-
-0.1
A
DC Current Gain
h
FE
(Note)
V
CE
=-6V, I
C
=-2mA
200
-
700
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-10mA, I
B
=-1mA
-
-
-0.3
V
Transition Frequency
f
T
V
CE
=-6V, I
C
=-1mA
-
100
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
-
4.0
-
pF
Noise Figure
NF
V
CE
=-6V, I
C
=-0.1mA
f=1kHz, Rg=10k
-
1.0
10
dB
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-120
V
Collector-Emitter Voltage
V
CEO
-120
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
I
C
-100
mA
Base Current
I
B
-20
mA
Collector Power Dissipation
P
C
150
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
2001. 2. 24
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KTA1517S
Revision No : 3
COLLECTOR CURRENT I (mA)
0
0
BASE-EMITTER VOLTAGE V (V)
BE
C
I - V
I - V
C
CE
CE
COLLECTOR-EMITTER VOLTAGE V (V)
0
C
COLLECTOR CURRENT I (mA)
-2
-4
-6
-8
-10
0
-1
-2
-3
-4
-5
-0.2
-0.4
-0.6
-0.8
-1.0
-5
-15
-20
-30
-10
-25
COLLECTOR CURRENT I (mA)
100
-0.1
-0.3
300
500
1k
3k
5k
DC CURRENT GAIN h
FE
COMMON EMITTER
-1
-3
-10
C
Ta=100 C
Ta=25 C
Ta=-25 C
V =-6V
Ta=25 C
CE
-50
-30
h - I
FE
C
EMITTER CURRENT I (
A)
COMMON EMITTER
V =-6V f=270Hz
3k
h (
x10
)
h (x
)
fe
1
30
100
h PARAMEMTER
30
3
5
10
100
50
1k
300
500
ie
re
h
300
1k
E
Ta=25 C
-5
h (
xk
)
ie
CE
h PARAMETER - I
10k
E
I =-1
A
B
0
-2
-3
-4
-5
-6
-7
-8
-9
-10
COMMON EMITTER
Ta=25 C
BE
C
Ta=100 C
Ta=25 C
Ta=-25 C
COLLECTOR-EMITTER
COLLECTOR CURRENT I (mA)
-0.1
-0.05
-0.03
-0.1
-0.01
-0.3
-1
-3
-10
C
-50
-30
-0.5
-0.3
CE
COMMON EMITTER
V - I
CE(sat)
C
Ta=25 C
I /I =10
C
COMMON
EMITTER
V =-6V
Ta=25 C
CE
SATURATION VOLTAGE V (V)
B
2001. 2. 24
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KTA1517S
Revision No : 3
h (x10
)
re
-5
C - V
ob
CB
CB
COLLECTOR-BASE VOLTAGE V (V)
-1
ob
1
COLLECTOR OUTPUT CAPACITANCE C (pF)
10
10
SIGNAL SOURCE RESISTANCE R (
)
g
100
-10
COLLECTOR CURRENT I (
A)
C
g ,
NF - R I
C
-100
-1k
-10k
1k
10k
100k
COMMON
EMITTER
V =-6V
f=1kHz
CE
NF
=1dB 2
3
4
6
8
10
12
NF=1dB
2
3
4
6
8
10
12
-3
-10
-30
-100
-200
3
5
20
I =0
f=1MHz
Ta=25 C
E
h PARAMETER - V
CE
CE
COLLECTOR-EMITTER VOLTAGE V (V)
-1
5
h PARAMETER
10
NF - R , I
C
g
C
COLLECTOR CURRENT I (
A)
-10
100
g
SIGNAL SOURCE RESISTANCE R (
)
10
-100
-1000
-10000
1k
10k
100k
V =-6V
CE
f=10Hz
NF=1dB
2
3
4
6
8
12
12
10
10
-3
-5
-10
-30 -50
-100
30
50
100
300
500
700
COMMON EMITTER
I =1mA
f=270Hz
Ta=25 C
E
fe
h
oe
h (x
)
h (xk
)
ie
COLLECTOR POWER DISSIPATION P (mW)
AMBIENT TEMPERATURE Ta ( C)
0
0
50
100
25
50
75
125
100
C
150
200
P - Ta
C
COMMON
EMITTER
150
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